BSS159NH6327XTSA2 Infineon Technologies
Артикул
BSS159NH6327XTSA2
Бренд
Infineon Technologies
Описание
MOSFET N-CH 60V 230MA SOT23-3, N-Channel 60 V 230mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
Цена
88 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSS159NH6327XTSA2.jpg
Other Names
BSS159NH6327XTSA2DKR,BSS159NH6327XTSA2TR,SP000919328,BSS159NH6327XTSA2CT
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
360mW (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)
Rds On (Max) @ Id, Vgs
3.5Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id
2.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs
1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
39 pF @ 25 V
FET Feature
Depletion Mode
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Base Product Number
BSS159
Mounting Type
Surface Mount
Series
SIPMOS®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
Vgs (Max)
±20V
Узнайте актуальную цену
Оставьте свой E-mail и наш менеджер ответит вам в течение 15 минут