BSZ160N10NS3GATMA1 Infineon Technologies
Артикул
BSZ160N10NS3GATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 8A/40A 8TSDSON, N-Channel 100 V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8
Цена
300 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSZ160N10NS3GATMA1.jpg
Other Names
BSZ160N10NS3 GINTR-ND,BSZ160N10NS3 G-ND,BSZ160N10NS3 GINDKR-ND,BSZ160N10NS3GATMA1CT,BSZ160N10NS3 GINCT-ND,BSZ160N10NS3G,BSZ160N10NS3 GINDKR,SP000482390,BSZ160N10NS3 GINTR,BSZ160N10NS3 G,BSZ160N10NS3GATMA1DKR,BSZ160N10NS3GATMA1TR,BSZ160N10NS3 GINCT
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.1W (Ta), 63W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs
16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Base Product Number
BSZ160
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TSDSON-8
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут