BSZ900N15NS3GATMA1 Infineon Technologies
Артикул
BSZ900N15NS3GATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 150V 13A 8TSDSON, N-Channel 150 V 13A (Tc) 38W (Tc) Surface Mount PG-TSDSON-8
Цена
246 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSZ900N15NS3GATMA1.jpg
Other Names
BSZ900N15NS3 G,BSZ900N15NS3 GCT-ND,BSZ900N15NS3GATMA1TR,BSZ900N15NS3 GCT,BSZ900N15NS3 GDKR,BSZ900N15NS3GATMA1DKR,BSZ900N15NS3GATMA1CT,BSZ900N15NS3 GDKR-ND,SP000677866,BSZ900N15NS3 GTR-ND,BSZ900N15NS3 G-ND
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
38W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Rds On (Max) @ Id, Vgs
90mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 75 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Base Product Number
BSZ900
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TSDSON-8
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
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