IRFH5303TRPBF Infineon Technologies
Артикул
IRFH5303TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 23A/82A 8PQFN, N-Channel 30 V 23A (Ta), 82A (Tc) 3.6W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFH5303TRPBF.jpg
Supplier Device Package
8-PQFN (5x6)
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 49A, 10V
Vgs(th) (Max) @ Id
2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2190 pF @ 15 V
FET Feature
-
Package / Case
8-PowerVDFN
Technology
MOSFET (Metal Oxide)
Series
HEXFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 82A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001572728
Standard Package
4,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
3.6W (Ta), 46W (Tc)
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