BUZ73A Infineon Technologies
Артикул
BUZ73A
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 5.5A TO220-3, N-Channel 200 V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BUZ73A.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
40W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Rds On (Max) @ Id, Vgs
600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
BUZ73AIN,SP000011373,BUZ73AXK,BUZ73A-ND,INFINFBUZ73A,2156-BUZ73A-IT,BUZ73AX
Mounting Type
Through Hole
Standard Package
500
Series
SIPMOS®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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