IKW30N65EL5XKSA1 Infineon Technologies
Артикул
IKW30N65EL5XKSA1
Бренд
Infineon Technologies
Описание
IGBT 650V 30A FAST DIODE TO247-3, IGBT - 650 V 85 A 227 W Through Hole PG-TO247-3
Цена
916 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/IKW30N65EL5XKSA1.jpg
Other Names
IKW30N65EL5XKSA1IN,SP001178080
Test Condition
400V, 30A, 10Ohm, 15V
Power - Max
227 W
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
85 A
IGBT Type
-
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
1.35V @ 15V, 30A
Switching Energy
470µJ (on), 1.35mJ (off)
Gate Charge
168 nC
Td (on/off) @ 25°C
33ns/308ns
Base Product Number
IKW30N65
Mounting Type
Through Hole
Series
TrenchStop™ 5
Package
Tube
Part Status
Active
Operating Temperature
-40°C ~ 175°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Reverse Recovery Time (trr)
100 ns
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