IMBF170R450M1XTMA1 Infineon Technologies
Артикул
IMBF170R450M1XTMA1
Бренд
Infineon Technologies
Описание
SICFET N-CH 1700V 9.8A TO263-7, N-Channel 1700 V 9.8A (Tc) 107W (Tc) Surface Mount PG-TO263-7-13
Цена
1 733 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IMBF170R450M1XTMA1.jpg
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V, 15V
Rds On (Max) @ Id, Vgs
450mOhm @ 2A, 15V
Vgs(th) (Max) @ Id
5.7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 12 V
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
610 pF @ 1000 V
FET Feature
-
Supplier Device Package
PG-TO263-7-13
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Product Number
IMBF170
Series
CoolSiC™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-8, D?Pak (7 Leads + Tab), TO-263CA
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IMBF170R450M1XTMA1TR,448-IMBF170R450M1XTMA1DKR,448-IMBF170R450M1XTMA1CT,SP002739682
Standard Package
1,000
Power Dissipation (Max)
107W (Tc)
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