IRFR3410TRLPBF Infineon Technologies
Артикул
IRFR3410TRLPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 31A DPAK, N-Channel 100 V 31A (Tc) 3W (Ta), 110W (Tc) Surface Mount D-Pak
Цена
208 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFR3410TRLPBF.jpg
Other Names
SP001572792,IRFR3410TRLPBFDKR,IRFR3410TRLPBFTR,IRFR3410TRLPBFCT
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3W (Ta), 110W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Rds On (Max) @ Id, Vgs
39mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1690 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IRFR3410
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Vgs (Max)
±20V
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