IMW120R350M1HXKSA1 Infineon Technologies
Артикул
IMW120R350M1HXKSA1
Бренд
Infineon Technologies
Описание
SICFET N-CH 1.2KV 4.7A TO247-3, N-Channel 1200 V 4.7A (Tc) 60W (Tc) Through Hole PG-TO247-3-41
Цена
1 418 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IMW120R350M1HXKSA1.jpg
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
60W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)
Rds On (Max) @ Id, Vgs
455mOhm @ 2A, 18V
Vgs(th) (Max) @ Id
5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
182 pF @ 800 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Other Names
SP001808376,2156-IMW120R350M1HXKSA1-448
Base Product Number
IMW120
Mounting Type
Through Hole
Series
CoolSiC™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-41
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Vgs (Max)
+23V, -7V
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