IPA50R800CE Infineon Technologies
Артикул
IPA50R800CE
Бренд
Infineon Technologies
Описание
MOSFET N-CH 500V 5A TO220-FP, N-Channel 500 V 5A (Tc) 26.4W (Tc) Through Hole PG-TO220-FP
Цена
55 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPA50R800CE.jpg
Power Dissipation (Max)
26.4W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Rds On (Max) @ Id, Vgs
800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id
3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs
12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V
FET Feature
Super Junction
Drive Voltage (Max Rds On, Min Rds On)
13V
Technology
MOSFET (Metal Oxide)
Other Names
IPA50R800CEXKSA1,2156-IPA50R800CE,IFEINFIPA50R800CE,SP000992084
Mounting Type
Through Hole
Series
CoolMOS™
Package
Tube
Part Status
Obsolete
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
TO-220-3 Full Pack
Supplier Device Package
PG-TO220-FP
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±20V
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