IPA80R650CEXKSA2 Infineon Technologies
Артикул
IPA80R650CEXKSA2
Бренд
Infineon Technologies
Описание
MOSFET N-CH 800V 8A TO220-3F, N-Channel 800 V 8A (Ta) 33W (Tc) Through Hole TO-220-3F
Цена
436 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPA80R650CEXKSA2.jpg
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220-3F
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001313394,ROCINFIPA80R650CEXKSA2,2156-IPA80R650CEXKSA2
Standard Package
50
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 150°C (TJ)
Base Product Number
IPA80R650
Power Dissipation (Max)
33W (Tc)
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