IPB020N10N5ATMA1 Infineon Technologies
Артикул
IPB020N10N5ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 120A D2PAK, N-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount PG-TO263-3
Цена
1 335 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB020N10N5ATMA1.jpg
Other Names
IPB020N10N5ATMA1CT,IPB020N10N5ATMA1DKR,SP001132558,IPB020N10N5ATMA1TR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
375W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
15600 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Base Product Number
IPB020
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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