IPB060N15N5ATMA1 Infineon Technologies
Артикул
IPB060N15N5ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 150V 136A TO263-7, N-Channel 150 V 136A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
Цена
1 359 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB060N15N5ATMA1.jpg
Package / Case
TO-263-7, D?Pak (6 Leads + Tab)
Supplier Device Package
PG-TO263-7-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 68A, 10V
Vgs(th) (Max) @ Id
4.6V @ 180µA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5300 pF @ 75 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
136A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IPB060N15N5ATMA1DKR,SP001607814,IPB060N15N5ATMA1-ND,448-IPB060N15N5ATMA1TR,448-IPB060N15N5ATMA1CT
Standard Package
1,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IPB060
Power Dissipation (Max)
250W (Tc)
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