IPB083N10N3GATMA1 Infineon Technologies
Артикул
IPB083N10N3GATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 80A D2PAK, N-Channel 100 V 80A (Tc) 125W (Tc) Surface Mount PG-TO263-3
Цена
324 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB083N10N3GATMA1.jpg
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
8.3mOhm @ 73A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3980 pF @ 50 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPB083N10N3 GDKR-ND,IPB083N10N3G,IPB083N10N3 G,IPB083N10N3GATMA1DKR,SP000458812,IPB083N10N3GATMA1TR,IPB083N10N3 GDKR,IPB083N10N3 GCT,IPB083N10N3 G-ND,IPB083N10N3 GCT-ND,IPB083N10N3GATMA1CT,IPB083N10N3 GTR-ND
Standard Package
1,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IPB083
Power Dissipation (Max)
125W (Tc)
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