IRF6795MTR1PBF Infineon Technologies
Артикул
IRF6795MTR1PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 25V 32A DIRECTFET, N-Channel 25 V 32A (Ta), 160A (Tc) 2.8W (Ta), 75W (Tc) Surface Mount DIRECTFET™ MX
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6795MTR1PBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.8W (Ta), 75W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
32A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs
1.8mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
4280 pF @ 13 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
IRF6795MTR1PBFDKR,IRF6795MTR1PBFCT,IRF6795MTR1PBFTR,SP001524708
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
DirectFET™ Isometric MX
Supplier Device Package
DIRECTFET™ MX
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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