IPB60R120P7ATMA1 Infineon Technologies
Артикул
IPB60R120P7ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 650V 26A D2PAK, N-Channel 650 V 26A (Tc) 95W (Tc) Surface Mount PG-TO263-3
Цена
713 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB60R120P7ATMA1.jpg
Other Names
IPB60R120P7ATMA1-ND,IPB60R120P7ATMA1TR,2156-IPB60R120P7ATMA1,SP001664922,IPB60R120P7ATMA1DKR,IPB60R120P7,IPB60R120P7ATMA1CT,IFEINFIPB60R120P7ATMA1
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
95W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Rds On (Max) @ Id, Vgs
120mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id
4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1544 pF @ 400 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPB60R120
Mounting Type
Surface Mount
Series
CoolMOS™ P7
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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