IPD053N06NATMA1 Infineon Technologies
Артикул
IPD053N06NATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 60V 18A/45A TO252-3, N-Channel 60 V 18A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Surface Mount PG-TO252-3
Цена
272 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD053N06NATMA1.jpg
Other Names
IPD053N06NTR-ND,IPD053N06NTR,IPD053N06NXTMA1,IPD053N06NDKR-ND,IPD053N06NCT-ND,IPD053N06N-ND,SP000962138,IPD053N06NATMA1TR,IPD053N06NATMA1DKR,IPD053N06NCT,IPD053N06NDKR,IPD053N06N,IPD053N06NATMA1CT
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3W (Ta), 83W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs
5.3mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
2.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 30 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Base Product Number
IPD053
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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