IPD135N03LGATMA1 Infineon Technologies
Артикул
IPD135N03LGATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 30A TO252-3, N-Channel 30 V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3
Цена
150 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD135N03LGATMA1.jpg
Other Names
IPD135N03L G,SP000796912,IPD135N03L GDKR-ND,IPD135N03L GCT-ND,IPD135N03L GDKR,IPD135N03LGATMA1DKR,IPD135N03L GCT,IPD135N03L GTR,IPD135N03LGATMA1TR,IPD135N03L GTR-ND,IPD135N03LGATMA1CT
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
31W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Rds On (Max) @ Id, Vgs
13.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IPD135
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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