IPD60R650CEAUMA1 Infineon Technologies
Артикул
IPD60R650CEAUMA1
Бренд
Infineon Technologies
Описание
CONSUMER, N-Channel 600 V 9.9A (Tc) 82W (Tc) Surface Mount PG-TO252-3-344
Цена
90 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD60R650CEAUMA1.jpg
Other Names
SP001396884,2156-IPD60R650CEAUMA1,ROCINFIPD60R650CEAUMA1
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
82W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.9A (Tc)
Rds On (Max) @ Id, Vgs
650mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPD60R650
Mounting Type
Surface Mount
Series
CoolMOS™
Package
Tape & Reel (TR)
Part Status
Active
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3-344
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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