IPD650P06NMATMA1 Infineon Technologies
Артикул
IPD650P06NMATMA1
Бренд
Infineon Technologies
Описание
IPD650P06NM - 60V P-CHANNEL POWE, P-Channel 60 V 22A (Tc) 83W (Tc) Surface Mount PG-TO252-3-313
Цена
109 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD650P06NMATMA1.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 30 V
FET Feature
-
Supplier Device Package
PG-TO252-3-313
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Series
OptiMOS™
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IPD650P06NMATMA1-448
Standard Package
1
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Power Dissipation (Max)
83W (Tc)
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