IPD65R250C6XTMA1 Infineon Technologies
Артикул
IPD65R250C6XTMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 650V 16.1A TO252-3, N-Channel 650 V 16.1A (Tc) 208.3W (Tc) Surface Mount PG-TO252-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD65R250C6XTMA1.jpg
Supplier Device Package
PG-TO252-3
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
250mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 100 V
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Series
CoolMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
16.1A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD65R250C6XTMA1CT,ROCINFIPD65R250C6XTMA1,2156-IPD65R250C6XTMA1,IPD65R250C6XTMA1DKR,IPD65R250C6XTMA1TR,SP000898654
Standard Package
2,500
Mounting Type
Surface Mount
Power Dissipation (Max)
208.3W (Tc)
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