IPD80N04S306ATMA1 Infineon Technologies
Артикул
IPD80N04S306ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 40V 90A TO252-3, N-Channel 40 V 90A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11
Цена
169 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD80N04S306ATMA1.jpg
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3-11
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 52µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3250 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Not For New Designs
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD80N04S3-06TR-ND,IPD80N04S3-06-ND,SP000261220,IFEINFIPD80N04S306ATMA1,IPD80N04S3-06,IPD80N04S306,IPD80N04S306ATMA1CT,IPD80N04S3-06TR,IPD80N04S306ATMA1TR,IPD80N04S3-06DKR-ND,IPD80N04S3-06DKR,IPD80N04S3-06CT,IPD80N04S3-06CT-ND,IPD80N04S306ATMA1DKR,2156-IP
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IPD80N04
Power Dissipation (Max)
100W (Tc)
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