IPI023NE7N3 G Infineon Technologies
Артикул
IPI023NE7N3 G
Бренд
Infineon Technologies
Описание
MOSFET N-CH 75V 120A TO262-3, N-Channel 75 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3
Цена
363 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPI023NE7N3-G.jpg
Other Names
IFEINFIPI023NE7N3 G,IPI023NE7N3 G-ND,2156-IPI023NE7N3 G-IT,IPI023NE7N3G
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs
206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
14400 pF @ 37.5 V
Mounting Type
Through Hole
Standard Package
500
Series
OptiMOS™
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-262-3 Long Leads, I?Pak, TO-262AA
Supplier Device Package
PG-TO262-3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
FET Feature
-
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