IPN60R3K4CEATMA1 Infineon Technologies
Артикул
IPN60R3K4CEATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 2.6A SOT223, N-Channel 600 V 2.6A (Tc) 5W (Tc) Surface Mount PG-SOT223-3
Цена
96 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPN60R3K4CEATMA1.jpg
Other Names
IPN60R3K4CEATMA1DKR,IPN60R3K4CEATMA1CT,IPN60R3K4CEATMA1TR,SP001434888
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
5W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Tc)
Rds On (Max) @ Id, Vgs
3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
93 pF @ 100 V
FET Feature
Super Junction
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPN60R3
Mounting Type
Surface Mount
Series
CoolMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Vgs (Max)
±20V
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