IPP030N10N3GXKSA1 Infineon Technologies
Артикул
IPP030N10N3GXKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 100A TO220-3, N-Channel 100 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3
Цена
1 176 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP030N10N3GXKSA1.jpg
Other Names
IPP030N10N3 G,IPP030N10N3G,IPP030N10N3 G-ND,SP000680768
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs
206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
14800 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Base Product Number
IPP030
Mounting Type
Through Hole
Series
OptiMOS™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±20V
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