IPP139N08N3 G Infineon Technologies
Артикул
IPP139N08N3 G
Бренд
Infineon Technologies
Описание
MOSFET N-CH 80V 45A TO220-3, N-Channel 80 V 45A (Tc) 79W (Tc) Through Hole PG-TO220-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP139N08N3-G.jpg
Supplier Device Package
PG-TO220-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
80 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
13.9mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1730 pF @ 40 V
FET Feature
-
Package / Case
TO-220-3
Technology
MOSFET (Metal Oxide)
Series
OptiMOS™
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPP139N08N3 G-ND,IPP139N08N3G
Standard Package
500
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
79W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут