IPT026N10N5ATMA1 Infineon Technologies
Артикул
IPT026N10N5ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 27A/202A 8HSOF, N-Channel 100 V 27A (Ta), 202A (Tc) 214W (Tc) Surface Mount PG-HSOF-8-1
Цена
1 078 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPT026N10N5ATMA1.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
27A (Ta), 202A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 150A, 10V
Vgs(th) (Max) @ Id
3.8V @ 158µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8800 pF @ 50 V
FET Feature
-
Base Product Number
IPT026
Supplier Device Package
PG-HSOF-8-1
Package / Case
8-PowerSFN
Series
OptiMOS™5
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IPT026N10N5ATMA1DKR,448-IPT026N10N5ATMA1TR,SP003883420,448-IPT026N10N5ATMA1CT
Standard Package
2,000
Power Dissipation (Max)
214W (Tc)
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