IPT60R080G7XTMA1 Infineon Technologies
Артикул
IPT60R080G7XTMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 650V 29A 8HSOF, N-Channel 650 V 29A (Tc) 167W (Tc) Surface Mount PG-HSOF-8-2
Цена
1 418 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPT60R080G7XTMA1.jpg
Other Names
INFINFIPT60R080G7XTMA1,IPT60R080G7XTMA1DKR,IPT60R080G7XTMA1CT,IPT60R080G7XTMA1TR,SP001615904,2156-IPT60R080G7XTMA1,IPT60R080G7XTMA1-ND
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
167W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Rds On (Max) @ Id, Vgs
80mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id
4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 400 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPT60R080
Mounting Type
Surface Mount
Series
CoolMOS™ G7
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
8-PowerSFN
Supplier Device Package
PG-HSOF-8-2
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,000
Vgs (Max)
±20V
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