IPW60R125P6XKSA1 Infineon Technologies
Артикул
IPW60R125P6XKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 30A TO247-3, N-Channel 600 V 30A (Tc) 219W (Tc) Through Hole PG-TO247-3
Цена
985 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPW60R125P6XKSA1.jpg
Other Names
ROCINFIPW60R125P6XKSA1,SP001114656,2156-IPW60R125P6XKSA1
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
219W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Rds On (Max) @ Id, Vgs
125mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2660 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPW60R125
Mounting Type
Through Hole
Series
CoolMOS™ P6
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Vgs (Max)
±20V
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