IPW65R019C7 Infineon Technologies
Артикул
IPW65R019C7
Бренд
Infineon Technologies
Описание
75A, 650V, 0.019OHM, N-CHANNEL M, N-Channel 650 V 75A (Tc) 446W (Tc) Through Hole PG-TO247-3
Цена
2 246 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPW65R019C7.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Rds On (Max) @ Id, Vgs
19mOhm @ 58.3A, 10V
Vgs(th) (Max) @ Id
4V @ 2.92mA
Gate Charge (Qg) (Max) @ Vgs
215 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9900 pF @ 400 V
FET Feature
-
FET Type
N-Channel
Power Dissipation (Max)
446W (Tc)
Supplier Device Package
PG-TO247-3
Series
CoolMOS™
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
HTSUS
0000.00.0000
Other Names
INFINFIPW65R019C7,2156-IPW65R019C7
Standard Package
1
Drive Voltage (Max Rds On, Min Rds On)
10V
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