IRF1010NSTRL Infineon Technologies
Артикул
IRF1010NSTRL
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 85A D2PAK, N-Channel 55 V 85A (Tc) 180W (Tc) Surface Mount D2PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF1010NSTRL.jpg
Supplier Device Package
D2PAK
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 43A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3210 pF @ 25 V
FET Feature
-
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Technology
MOSFET (Metal Oxide)
Series
HEXFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
RoHS Status
RoHS non-compliant
Power Dissipation (Max)
180W (Tc)
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