IRF3711 Infineon Technologies
Артикул
IRF3711
Бренд
Infineon Technologies
Описание
MOSFET N-CH 20V 110A TO220AB, N-Channel 20 V 110A (Tc) 3.1W (Ta), 120W (Tc) Through Hole TO-220AB
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF3711.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.1W (Ta), 120W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Rds On (Max) @ Id, Vgs
6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
2980 pF @ 10 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
*IRF3711
Mounting Type
Through Hole
Standard Package
50
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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