IRF7101PBF Infineon Technologies
Артикул
IRF7101PBF
Бренд
Infineon Technologies
Описание
MOSFET 2N-CH 20V 3.5A 8-SOIC, Mosfet Array 2 N-Channel (Dual) 20V 3.5A 2W Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/IRF7101PBF.jpg
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
REACH Status
REACH Unaffected
Power - Max
2W
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
320pF @ 15V
RoHS Status
ROHS3 Compliant
Base Product Number
IRF7101PBF
Operating Temperature
-55°C ~ 150°C (TJ)
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
3.5A
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001559728
Standard Package
3,800
Mounting Type
Surface Mount
FET Feature
Logic Level Gate
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