IRF5802 Infineon Technologies
Артикул
IRF5802
Бренд
Infineon Technologies
Описание
MOSFET N-CH 150V 900MA MICRO6, N-Channel 150 V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
Цена
119 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF5802.jpg
Power Dissipation (Max)
2W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
900mA (Ta)
Rds On (Max) @ Id, Vgs
1.2Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
88 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Standard Package
100
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
Micro6™(TSOP-6)
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±30V
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