IRF5806 Infineon Technologies
Артикул
IRF5806
Бренд
Infineon Technologies
Описание
MOSFET P-CH 20V 4A MICRO6, P-Channel 20 V 4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF5806.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2W (Ta)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Rds On (Max) @ Id, Vgs
86mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
594 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Mounting Type
Surface Mount
Standard Package
100
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
Micro6™(TSOP-6)
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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