IRF6201PBF Infineon Technologies
Артикул
IRF6201PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 20V 27A 8SO, N-Channel 20 V 27A (Ta) 2.5W (Ta) Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6201PBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
27A (Ta)
Rds On (Max) @ Id, Vgs
2.45mOhm @ 27A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
195 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
8555 pF @ 16 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Other Names
2156-IRF6201PBF-IT,INFINFIRF6201PBF,SP001570096
Mounting Type
Surface Mount
Standard Package
3,800
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±12V
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