IRF6603 Infineon Technologies
Артикул
IRF6603
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 27A DIRECTFET, N-Channel 30 V 27A (Ta), 92A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6603.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.6W (Ta), 42W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
27A (Ta), 92A (Tc)
Rds On (Max) @ Id, Vgs
3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
6590 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
IRF6603TR,SP001530098,IRF6603CT,*IRF6603
Mounting Type
Surface Mount
Standard Package
4,800
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)
Part Status
Obsolete
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
DirectFET™ Isometric MT
Supplier Device Package
DIRECTFET™ MT
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
+20V, -12V
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