IRF6616 Infineon Technologies
Артикул
IRF6616
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 19A DIRECTFET, N-Channel 30 V 19A (Ta), 106A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6616.jpg
Supplier Device Package
DIRECTFET™ MX
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3765 pF @ 20 V
FET Feature
-
Package / Case
DirectFET™ Isometric MX
Technology
MOSFET (Metal Oxide)
RoHS Status
RoHS non-compliant
Series
HEXFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 106A (Tc)
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001530696
Standard Package
4,800
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
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