IRF6718L2TRPBF Infineon Technologies
Артикул
IRF6718L2TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 25V 61A DIRECTFET, N-Channel 25 V 61A (Ta), 270A (Tc) 4.3W (Ta), 83W (Tc) Surface Mount DIRECTFET L6
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6718L2TRPBF.jpg
Supplier Device Package
DIRECTFET L6
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
25 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.7mOhm @ 61A, 10V
Vgs(th) (Max) @ Id
2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
96 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6500 pF @ 13 V
FET Feature
-
Package / Case
DirectFET™ Isometric L6
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
61A (Ta), 270A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF6718L2TRPBFDKR,IRF6718L2TRPBFCT,IRF6718L2TRPBF-ND,IRF6718L2TRPBFTR,SP001523928
Standard Package
4,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
4.3W (Ta), 83W (Tc)
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