IRF6785MTRPBF Infineon Technologies
Артикул
IRF6785MTRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 3.4A DIRECTFET, N-Channel 200 V 3.4A (Ta), 19A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount DIRECTFET™ MZ
Цена
333 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6785MTRPBF.jpg
Package / Case
DirectFET™ Isometric MZ
Supplier Device Package
DIRECTFET™ MZ
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta), 19A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF6785MTRPBFTR,IRF6785MTRPBF-ND,IRF6785MTRPBFCT,2156-IRF6785MTRPBF,SP001562032,IRF6785MTRPBFDKR,IFEINFIRF6785MTRPBF
Standard Package
4,800
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Base Product Number
IRF6785
Power Dissipation (Max)
2.8W (Ta), 57W (Tc)
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