IRF7210PBF Infineon Technologies
Артикул
IRF7210PBF
Бренд
Infineon Technologies
Описание
MOSFET P-CH 12V 16A 8SO, P-Channel 12 V 16A (Ta) 2.5W (Ta) Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7210PBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
16A (Ta)
Rds On (Max) @ Id, Vgs
7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 500µA
Gate Charge (Qg) (Max) @ Vgs
212 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
17179 pF @ 10 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Other Names
SP001554134
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
95
Vgs (Max)
±12V
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