IRF7700TR Infineon Technologies
Артикул
IRF7700TR
Бренд
Infineon Technologies
Описание
MOSFET P-CH 20V 8.6A 8TSSOP, P-Channel 20 V 8.6A (Tc) 1.5W (Tc) Surface Mount 8-TSSOP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7700TR.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.5W (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
8.6A (Tc)
Rds On (Max) @ Id, Vgs
15mOhm @ 8.6A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
4300 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Mounting Type
Surface Mount
Standard Package
4,000
Series
HEXFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±12V
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