IRF7706 Infineon Technologies
Артикул
IRF7706
Бренд
Infineon Technologies
Описание
MOSFET P-CH 30V 7A 8TSSOP, P-Channel 30 V 7A (Ta) 1.51W (Ta) Surface Mount 8-TSSOP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7706.jpg
Supplier Device Package
8-TSSOP
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
22mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2211 pF @ 25 V
FET Feature
-
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Technology
MOSFET (Metal Oxide)
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
7A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
100
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
RoHS Status
RoHS non-compliant
Power Dissipation (Max)
1.51W (Ta)
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