IRF7749L2TR1PBF Infineon Technologies
Артикул
IRF7749L2TR1PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 60V 33A DIRECTFET, N-Channel 60 V 33A (Ta), 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
Цена
861 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7749L2TR1PBF.jpg
Supplier Device Package
DirectFET™ Isometric L8
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 120A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12320 pF @ 25 V
FET Feature
-
Package / Case
DirectFET™ Isometric L8
Technology
MOSFET (Metal Oxide)
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
33A (Ta), 375A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF7749L2TR1PBFTR,IRF7749L2TR1PBFDKR,SP001575300,IRF7749L2TR1PBFCT
Standard Package
1,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)
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