IRF7821TR Infineon Technologies
Артикул
IRF7821TR
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 13.6A 8SO, N-Channel 30 V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7821TR.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
13.6A (Ta)
Rds On (Max) @ Id, Vgs
9.1mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1010 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Standard Package
4,000
Series
HEXFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 155°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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