IRF7907PBF Infineon Technologies
Артикул
IRF7907PBF
Бренд
Infineon Technologies
Описание
MOSFET 2N-CH 30V 9.1A/11A 8SOIC, Mosfet Array 2 N-Channel (Dual) 30V 9.1A, 11A 2W Surface Mount 8-SO
Цена
205 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/IRF7907PBF.jpg
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
REACH Status
REACH Unaffected
Power - Max
2W
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
30V
Rds On (Max) @ Id, Vgs
16.4mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 15V
RoHS Status
ROHS3 Compliant
Base Product Number
IRF7907PBF
Operating Temperature
-55°C ~ 150°C (TJ)
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
9.1A, 11A
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001572250
Standard Package
3,800
Mounting Type
Surface Mount
FET Feature
Logic Level Gate
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