IRFH5104TR2PBF Infineon Technologies
Артикул
IRFH5104TR2PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 40V 24A/100A PQFN, N-Channel 40 V 24A (Ta), 100A (Tc) 3.6W (Ta), 114W (Tc) Surface Mount PQFN (5x6)
Цена
224 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFH5104TR2PBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.6W (Ta), 114W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
3.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3120 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
IRFH5104TR2PBF-ND,IRFH5104TR2PBFDKR,SP001560360,IRFH5104TR2PBFTR,IRFH5104TR2PBFCT
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-VQFN Exposed Pad
Supplier Device Package
PQFN (5x6)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
400
Vgs (Max)
±20V
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