IRFR3709Z Infineon Technologies
Артикул
IRFR3709Z
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 86A DPAK, N-Channel 30 V 86A (Tc) 79W (Tc) Surface Mount D-Pak
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFR3709Z.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
79W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
86A (Tc)
Rds On (Max) @ Id, Vgs
6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
2330 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
*IRFR3709Z,SP001555082
Mounting Type
Surface Mount
Standard Package
75
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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