IRFS31N20DPBF Infineon Technologies
Артикул
IRFS31N20DPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 31A D2PAK, N-Channel 200 V 31A (Tc) 3.1W (Ta), 200W (Tc) Surface Mount D2PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFS31N20DPBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.1W (Ta), 200W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Rds On (Max) @ Id, Vgs
82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2370 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
INFINFIRFS31N20DPBF,SP001567562,*IRFS31N20DPBF,2156-IRFS31N20DPBF-IT
Mounting Type
Surface Mount
Standard Package
1,000
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±30V
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