IRLIZ34N Infineon Technologies
Артикул
IRLIZ34N
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 22A TO220AB FP, N-Channel 55 V 22A (Tc) 37W (Tc) Through Hole PG-TO220-FP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLIZ34N.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
37W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Rds On (Max) @ Id, Vgs
35mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Other Names
*IRLIZ34N
Mounting Type
Through Hole
Standard Package
50
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-220-3 Full Pack
Supplier Device Package
PG-TO220-FP
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±16V
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